Buried waveguides in a 1.5µm InGaAs/InGaAsP structure fabricated by ion-induced quantum well intermixing

J.E. Haysom; J.J. He; P.J. Poole; Emil S. Koteles; A. Delage; Y. Feng; S. Charbonneau

Integrated Photonics Research
OSA Technical Digest (Optica Publishing Group, 1998),
paper IMH19

Buried waveguides in a 1.5µm InGaAs/InGaAsP structure fabricated by ion-induced quantum well intermixing

J.E. Haysom, J.J. He, P.J. Poole, Emil S. Koteles, A. Delage, Y. Feng, and S. Charbonneau

Integrated Photonics Research 1998

British Columbia Canada
ISBN: 1-55752-521-8

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J. E. Haysom, J. J. He, P. J. Poole, E. S. Koteles, A. Delage, Y. Feng, and S. Charbonneau, "Buried waveguides in a 1.5µm InGaAs/InGaAsP structure fabricated by ion-induced quantum well intermixing," in Integrated Photonics Research, Vol. 4 of OSA Technical Digest (Optica Publishing Group, 1998), paper IMH19.

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Abstract

Quantum well intermixing (QWI) has been shown to be a powerful method for inducing post-growth modifications of the bandgap and optical properties of quantum well (QW) structures.

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