Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Integrated Photonics Research
  • OSA Technical Digest (Optica Publishing Group, 1998),
  • paper ITuF2

Flip-chip GaN LED with Highly Reflective Ag P-contact

Not Accessible

Your library or personal account may give you access

Abstract

GaN blue LEDs using a sapphire substrate were first introduced in 1981 [1]. One of the differences between GaN LEDs and previous LEDs is that the p-contact and n-contact are located on the same surface of the LED chip.

© 1998 Optical Society of America

PDF Article
More Like This
Effects of Pre-annealed Nickel Contact Layer on LED Device Performance using Ni/Ag-based p-type Contacts

Wing Cheung Chong and Kei May Lau
AW3K.2 Asia Communications and Photonics Conference (ACPC) 2013

Thermal Stability of Reflection Multilayers on p-AlGaN/GaN contact of deep-UV Light Emitting Diodes

M. Khizar, K. Acharya, and M. Yasin Akhtar Raja
ITuD5 Integrated Photonics and Nanophotonics Research and Applications (IPNRA) 2007

Highly efficient InGaN/GaN blue LED grown on Si (111) substrate

Jun-Youn Kim, Yongjo Tak, Jae Won Lee, Hyun-Gi Hong, Suhee Chae, Hyoji Choi, Bokki Min, Youngsoo Park, Minho Kim, Seongsuk Lee, Namgoo Cha, Yoonhee Shin, Jong-Ryeol Kim, and Jong-In Shim
CWF1 CLEO: Science and Innovations (CLEO_SI) 2011

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2022 | Optica Publishing Group. All Rights Reserved