Optical gain enhancement in InP-based quantum-well lasers with n-doped separate confinement heterostructure layers

Shunji Seki; Kiyoyuki Yokoyama

Integrated Photonics Research
OSA Technical Digest (Optica Publishing Group, 1998),
paper ITuG3

Optical gain enhancement in InP-based quantum-well lasers with n-doped separate confinement heterostructure layers

Shunji Seki and Kiyoyuki Yokoyama

Integrated Photonics Research 1998

British Columbia Canada
ISBN: 1-55752-521-8

From the session
Quantum Wells I: Carrier Transport in Quantum Well Devices (ITuG)

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S. Seki and K. Yokoyama, "Optical gain enhancement in InP-based quantum-well lasers with n-doped separate confinement heterostructure layers," in Integrated Photonics Research, Vol. 4 of OSA Technical Digest (Optica Publishing Group, 1998), paper ITuG3.

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Abstract

Highly efficient 1.3-μm strained-layer (SL) multiple-quantum-well (MQW) lasers operating over a wide temperature range have attracted much attention due to their applications to fiber-in-the-loop (FITL) and fiber-to-the-home (FTTH) systems [1].

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