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Conferences > IPR > 1998 > ITuH > ITuH2
  • Integrated Photonics Research
  • OSA Technical Digest (Optica Publishing Group, 1998),
  • paper ITuH2

Waveguide-Fed SiGe Avalanche pin Photodetector Grown on SOI Substrate with 0.2A/W External Responsivity at 1.3μm

T. Yoshimoto, S. Thomas, K.L. Wang, and B. Jalali

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Abstract

We demonstrate a SiGe avalanche photodetector grown on a silicon-on-insuiator(SOI) passive waveguide. The thick SOI waveguide couples the light from an optical fiber into the SiGe detector with strain-limited thin absorption region. The detector exhibits low dark current, sharp breakdown and an external responsivity of 0.2A/W at 1.3μm.

© 1998 Optical Society of America

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