Abstract
This talk will address the current status of Si-based optoelectronics and explore the opportunities for monolithic integration of optoelectronic integrated circuits (OEIC) based on the advantages of nanostructures. Device applications of Si-based quantum dots, with emphasis on light emission and detection, will be discussed. Other optoelectronic components will also be briefly reviewed. Si-based nanostructures can now be prepared by several methods for sizes down to as small as a few nanometers. We will review different growth modes as well as their control for improving the optical properties.
© 1998 Optical Society of America
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