Electronic structure engineering of mid-infrared lasers

Michael E. Flatté; J. T. Olesberg; T. F. Boggess; T. C. Hasenberg; C. H. Grein

doi:10.1364/IPR.1999.RTuC3

Integrated Photonics Research
OSA Technical Digest Series (Optica Publishing Group, 1999),
paper RTuC3
•https://doi.org/10.1364/IPR.1999.RTuC3

Electronic structure engineering of mid-infrared lasers

Michael E. Flatté, J. T. Olesberg, T. F. Boggess, T. C. Hasenberg, and C. H. Grein

Integrated Photonics Research 1999

Santa Barbara, California United States
ISBN: 1-55752-586-2

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IR, Mid-IR and THz (RTuC)

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M. E. Flatté, J. T. Olesberg, T. F. Boggess, T. C. Hasenberg, and C. H. Grein, "Electronic structure engineering of mid-infrared lasers," in Integrated Photonics Research, OSA Technical Digest Series (Optica Publishing Group, 1999), paper RTuC3.

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Abstract

Mid-infrared semiconductor lasers have a variety of potential applications, including as spectroscopic probes for pollution monitoring and non-invasive medical sensing and high-power sources for military infrared countermeasures.

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