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Conferences > IPR > 1999 > RTuF > RTuF3

Analysis of excitons in gallium nitride-based quantum wells under valence band mixing, strain and piezoelectric field

C. Bulutay, N. Dagli, and A. Imamoğlu

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Abstract

The binding energy of excitons in bulk GaN is about 26 meV [1], which is larger than in GaAs by more than six times.

© 1999 Optical Society of America

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