Abstract
A new technique for the monolithic integration of a laser with a spot size converter is presented. The introduction of the wet thermal selective oxidation of an AlxGai1−xAs layer with a high Al-composition simplifies the fabrication to one planar epitaxial growth step and one noncritical conventional etch. We report on the design, fabrication and performance of a 980nm InGaAs/GaAs strained quantum well tapered oxide confined laser with CW threshold currents of 25mA and differential quantum efficiencies of 21%/facet. The integrated spot size converter effectively reduced the horizontal and vertical FWHM to 7.5° and 13.5°, respectively.
© 2000 Optical Society of America
PDF ArticleMore Like This
N. Yoshimoto, K. Kawano, M. Kohtoku, S. Sekine, M. Yanagibashi, and S. Kondo
SaC5 Integrated Photonics Research (IPR) 1994
Yuanhao Zhang, Can Liu, Minwen Xiang, Guojiong Li, PanPan Yu, Qiaoyin Lu, MingZhi Lu, and WeiHua Guo
JTh2A.57 CLEO: Applications and Technology (CLEO:A&T) 2023
Y. Okunuki, H. Yamazaki, Y. Sasaki, T. Koui, Y. Sakata, K. Komatsu, A. Goto, and N. Kimura
WM26 Optical Fiber Communication Conference (OFC) 2000