Abstract

Avalanche photodiode arrays have been widely used in detecting weak optical signals, such as in high resolution Position Emission Tomography (PET) [1], in Detection of Internally Reflected Cherenkov light (DIRC) [2], or in Scintillating Fiber Readouts application [3], where the APD arrays were used as compact alternatives to the photomultiplier tubes (PMTs). Since all these APD arrays were based on silicon materials they cannot efficiently detect infrared signals with wavelength λ. ≥ 1.1 μm [1-4]. The rapidly emerging three-dimensional imaging technology, however, requires detector arrays that operate in the short wavelength infrared (SWIR) range [5]. In_0.53Ga_0.47As provides wider wavelength coverage and higher optoelectronic absorption than silicon in this wavelength range, and has been widely used in photodetectors for long-haul communication systems. In this paper, we report a novel 12 × 12 APD array with an In_0.53Ga_0.47As absorption region and a thin In_0.52Al_0.48As multiplication region that was grown on an InP substrate. The APDs on this array exhibit uniform breakdown voltage, dark current, and avalanche multiplication gain.

© 2002 Optical Society of America