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Semiconductor optical amplifier and electroabsorption modulator monolithically integrated via selective area growth

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Abstract

A monolithically integrated semiconductor optical amplifier and electroabsorption modulator has been fabricated in the InP/InGaAsP system by selective area growth. An amplifier gain of 20dB was measured together with a modulator attenuation of 16dB at -5V reverse bias for an amplifier peak emission at 1550nm.

© 2003 Optical Society of America

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