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Laterally patterned bandstructure and surface-normal anisotropy in micromachined (001) InGaAs multiple quantum wells

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We demonstrate that micromachining lattice-matched InGaAs quantum wells grown with barriers under tensile strain produces laterally patterned modifications to the semiconductor bandstructure and a large surface-normal optical anisotropy. The technique enables novel applications ranging from polarization modulators to quasi-phase matching to new piezoelectric materials.

© 2003 Optical Society of America

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