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980 nm DBR Lasers Monolithically Integrated with EA Modulators for Optical Interconnect Applications

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Abstract

Short-cavity InGaAs/GaAs/AlGaAs lasers with first order DBRs and integrated EAMs were fabricated using a quantum well intermixing process. >5mW output was achieved at 45mA. DC extinction was >15dB at -1.5V with efficiencies up to 20dB/V.

© 2005 Optical Society of America

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