Low Insertion Loss, High-Speed Silicon Electro-Optic Modulator Design

Fuwan Gan; Franz X. Kärtner

doi:10.1364/IPRA.2006.ITuB2

Integrated Photonics Research and Applications/Nanophotonics
Technical Digest (CD) (Optica Publishing Group, 2006),
paper ITuB2
•https://doi.org/10.1364/IPRA.2006.ITuB2

Low Insertion Loss, High-Speed Silicon Electro-Optic Modulator Design

Fuwan Gan and Franz X. Kärtner

Integrated Photonics Research and Applications 2006

Uncasville, Connecticut United States
24–26 April 2006
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F. Gan and F. X. Kärtner, "Low Insertion Loss, High-Speed Silicon Electro-Optic Modulator Design," in Integrated Photonics Research and Applications/Nanophotonics, Technical Digest (CD) (Optica Publishing Group, 2006), paper ITuB2.

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Abstract

A high-speed CMOS-compatible Mach-Zehnder electro-optic modulator with graded doping profile for minimum optical loss and maximum modulation speed is investigated, with operating frequency 32GHz, low insertion loss of 3dB and low figure of merit V_πL=6Vmm.

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