Abstract
A novel design of semiconductor-on-metal MSM photodetector for reducing dark current is reported. Leakage of 11.6µA and responsivity of 2mA/W is shown, while conventional metal-on-semiconductor design shows leakage of 166µA, and responsivity of 2.5mA/W.
© 2010 Optical Society of America
PDF ArticleMore Like This
Ali K. Okyay, Chi On Chui, and Krishna C. Saraswat
CTuD4 Conference on Lasers and Electro-Optics (CLEO:S&I) 2003
Junghwan Kim, K.J. Lee, F.G. Johnson, W. B, Johnson, and Chi H. Lee
CTuI3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1999
Thomas Mueller, Fengnian Xia, and Phaedon Avouris
CFE6 Conference on Lasers and Electro-Optics (CLEO:S&I) 2010