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Integrated GaN photonic circuits on silicon (100) for second harmonic generation

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Abstract

Second order optical nonlinearity is demonstrated in silicon architecture through heterogeneous integration of single-crystalline gallium nitride on silicon (100) substrates. The χ2 nonlinear susceptibility is measured to be as high as 16.4 ± 7.0 pm/V.

© 2011 Optical Society of America

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