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Modified Uni-Traveling Carrier Photodiodes Heterogeneously Integrated on Silicon-on-Insulator (SOI)

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Abstract

We propose and demonstrate a novel InP-based evanescently-coupled modified uni-traveling carrier photodiode (MUTC PD) on SOI waveguide. A 100-µm long waveguide MUTC PD reaches a third-order local intercept point (IP3) of 20 dBm at 7 GHz and 10 mA.

© 2012 Optical Society of America

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