Abstract
GaAs/InGaAs nanopore superlattices in the triangular cell configuration are numerically analyzed. Subband gaps can be observed in the conduction band ranging from less than 1 meV up to 20 meV. Optical absorption due to intersubband transitions is also studied, and strong absorption peaks covering the entire terahertz and far-infrared ranges are observed at various operation temperatures.
© 2012 Optical Society of America
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