Optical Surface Plasmon in Semiconductors

Xiaoou Mao; Michael Cada

doi:10.1364/IPRSN.2013.IM1B.4

Advanced Photonics 2013
OSA Technical Digest (online) (Optica Publishing Group, 2013),
paper IM1B.4
•https://doi.org/10.1364/IPRSN.2013.IM1B.4

Optical Surface Plasmon in Semiconductors

Xiaoou Mao and Michael Cada

Integrated Photonics Research, Silicon and Nanophotonics 2013

Rio Grande, Puerto Rico United States
14–17 July 2013
ISBN: 978-1-55752-981-7

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Plasmonics (IM1B)

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X. Mao and M. Cada, "Optical Surface Plasmon in Semiconductors," in Advanced Photonics 2013, H. Chang, V. Tolstikhin, T. Krauss, and M. Watts, eds., OSA Technical Digest (online) (Optica Publishing Group, 2013), paper IM1B.4.

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Abstract

Derivation and numerical calculation shows a new solution for surface plasmons excitable with 1.55 µm operating wavelength at Si/SiO₂ interface when the electron density of heavily doped silicon equals to 2.35*10²⁷ m⁻³.

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