CMOS Compatible High Power Erbium Doped Distributed Feedback Lasers

Purnawirman; Ehsan Shah Hosseini; Jonathan Bradley; Jie Sun; Gerald Leake; Thomas N. Adam; Douglas Coolbaugh; Michael R. Watts

doi:10.1364/IPRSN.2013.IM2A.4

Advanced Photonics 2013
OSA Technical Digest (online) (Optica Publishing Group, 2013),
paper IM2A.4
•https://doi.org/10.1364/IPRSN.2013.IM2A.4

CMOS Compatible High Power Erbium Doped Distributed Feedback Lasers

Purnawirman, Ehsan Shah Hosseini, Jonathan Bradley, Jie Sun, Gerald Leake, Thomas N. Adam, Douglas Coolbaugh, and Michael R. Watts

Integrated Photonics Research, Silicon and Nanophotonics 2013

Rio Grande, Puerto Rico United States
14–17 July 2013
ISBN: 978-1-55752-981-7

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Lasers and Amplifiers (IM2A)

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Purnawirman, E. S. Hosseini, J. Bradley, J. Sun, G. Leake, T. N. Adam, D. Coolbaugh, and M. R. Watts, "CMOS Compatible High Power Erbium Doped Distributed Feedback Lasers," in Advanced Photonics 2013, H. Chang, V. Tolstikhin, T. Krauss, and M. Watts, eds., OSA Technical Digest (online) (Optica Publishing Group, 2013), paper IM2A.4.

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Abstract

On chip, high power (75mW), erbium-doped distributed feedback lasers are demonstrated in a CMOS compatible fabrication flow. The laser cavities consist of silicon nitride waveguide and grating features defined by wafer-scale immersion lithography and a top erbium-doped aluminum oxide layer deposited as the final step in the fabrication process.

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