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InP Based Very-Low Voltage Electro-optic Intensity Modulators in Conventional Waveguides

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Abstract

Very-low drive voltage intensity modulators were fabricated in InP epitaxial layers containing MQW cores using conventional waveguides and processing. 1 cm long electrode devices have one arm driven Vπ of 1.6 V at 1550 nm.

© 2015 Optical Society of America

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