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Heterogeneous Integration Methods and Devices

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Abstract

The integration of III-V or III-N materials onto selected regions of a silicon or silicon-on-insulator (SOI) with the goal of creating electronic-photonic circuits is examined. Epitaxial transfer and bonding methods are discussed, as well as issues of CMOS compatibility and the thermal environment of the III-V devices. Possible devices for future electronic-photonic integration are also discussed.

© 2015 Optical Society of America

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More Like This
Electronic-Photonic Integration Using the Light-Emitting Transistor

J. M. Dallesasse, P. L. Lam, and G. Walter
LTu3A.2 Latin America Optics and Photonics Conference (LAOP) 2014

Heterogeneous integration of silicon photonic devices and integrated circuits

Hyundai Park, Brian R. Koch, Erik J. Norberg, Jonathon E. Roth, Byungchae Kim, Anand Ramaswamy, John Hutchinson, Jae-Hyuk Shin, and Gregory Fish
25J3_2 Conference on Lasers and Electro-Optics/Pacific Rim (CLEOPR) 2015

Heterogeneous Integration of Light-Emitting Transistors on Silicon for Hybrid Electronic-Photonic Logic Circuitry

John A. Carlson and John M. Dallesasse
JTh2A.60 CLEO: Applications and Technology (CLEO_AT) 2019

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