Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

InAs/GaAs quantum dot lasers monolithically grown on silicon for silicon photonics

Not Accessible

Your library or personal account may give you access

Abstract

Monolithically integrating III-V lasers on Si is the most promising solution for light sources on silicon. We demonstrated the long lifetime for telecommunications-wavelength InAs/GaAs quantum dot laser monolithically grown on silicon.

© 2016 Optical Society of America

PDF Article
More Like This
Silicon-based III-V quantum-dot lasers for silicon photonics

Jiang Wu, Siming Chen, Mingchu Tang, Mengya Liao, and Huiyun Liu
ATh2F.1 Asia Communications and Photonics Conference (ACP) 2016

High-performance InAs/GaAs quantum-dot laser didoes monolithically grown on silicon for silicon photonics

Mengya Liao, Mingchu Tang, Siming Chen, Jiang Wu, and Huiyun Liu
CB_4_3 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2017

1300 nm and 1500 nm InAs/GaAs quantum dot lasers directly grown on SOI substrates for silicon photonics integration

Wenqi Wei, Zihao Wang, Ting Wang, and Jianjun Zhang
T2D.5 Asia Communications and Photonics Conference (ACP) 2021

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.