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1550-nm InGaAsP multi-quantum-well structures in InP nano-ridges by selective MOCVD growth on SOI substrates

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Abstract

We report direct growth of 1550-nm multi-quantum-well p-i-n structures in densely-packed, smooth, highly crystalline, and millimeter-long InP nano-ridges grown by MOCVD on SOI substrates using aspect-ratio-trapping and selective area growth.

© 2017 Optical Society of America

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