Site controlled InAs/GaAs nanostructures on Si nano-tips

I. Prieto; I. Prieto; R. Kozak; O. Skibitzki; J. Martín-Sánchez; T. Fromherz; M. D. Rossell; E. Gini; G. Capellini; G. Capellini; A. Rastelli; R. Erni; T. Schroeder; T. Schroeder; H von Känel; H von Känel

doi:10.1364/IPRSN.2017.ITu2A.6

Advanced Photonics 2017 (IPR, NOMA, Sensors, Networks, SPPCom, PS)
OSA Technical Digest (online) (Optica Publishing Group, 2017),
paper ITu2A.6
•https://doi.org/10.1364/IPRSN.2017.ITu2A.6

Site controlled InAs/GaAs nanostructures on Si nano-tips

I. Prieto, R. Kozak, O. Skibitzki, J. Martín-Sánchez, T. Fromherz, M. D. Rossell, E. Gini, G. Capellini, A. Rastelli, R. Erni, T. Schroeder, and H von Känel

Integrated Photonics Research, Silicon and Nanophotonics 2017

New Orleans, Louisiana United States
24–27 July 2017
ISBN: 978-1-943580-30-9

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Integrated Optical Source Technologies (ITu2A)

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I. Prieto, R. Kozak, O. Skibitzki, J. Martín-Sánchez, T. Fromherz, M. D. Rossell, E. Gini, G. Capellini, A. Rastelli, R. Erni, T. Schroeder, and H. von Känel, "Site controlled InAs/GaAs nanostructures on Si nano-tips," in Advanced Photonics 2017 (IPR, NOMA, Sensors, Networks, SPPCom, PS), OSA Technical Digest (online) (Optica Publishing Group, 2017), paper ITu2A.6.

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Abstract

A novel strategy towards the scalable realization of site controlled III-V quantum dots on Si substrates is presented. The nano-heteroepitaxy of InAs/GaAs nanostructures on Si(001) nano-tips was evaluated by structural and optical characterization.

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