Gallium phosphide on insulator photonics enabled by micro-transfer printing

Maximilien Billet; Maximilien Billet; Maximilien Billet; Yoan Léger; Charles Cornet; Fabrice Raineri; Isabelle Sagnes; Gunther Roelkens; Gunther Roelkens; Francois Leo; Bart Kuyken; Bart Kuyken

doi:10.1364/IPRSN.2020.ITu2A.6

OSA Advanced Photonics Congress (AP) 2020 (IPR, NP, NOMA, Networks, PVLED, PSC, SPPCom, SOF)
OSA Technical Digest (Optica Publishing Group, 2020),
paper ITu2A.6
•https://doi.org/10.1364/IPRSN.2020.ITu2A.6

Gallium phosphide on insulator photonics enabled by micro-transfer printing

Maximilien Billet, Yoan Léger, Charles Cornet, Fabrice Raineri, Isabelle Sagnes, Gunther Roelkens, Francois Leo, and Bart Kuyken

Integrated Photonics Research, Silicon and Nanophotonics 2020

Washington, DC United States
13–16 July 2020
ISBN: 978-1-943580-79-8

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III-V Photonics (ITu2A)

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M. Billet, Y. Léger, C. Cornet, F. Raineri, I. Sagnes, G. Roelkens, F. Leo, and B. Kuyken, "Gallium phosphide on insulator photonics enabled by micro-transfer printing," in OSA Advanced Photonics Congress (AP) 2020 (IPR, NP, NOMA, Networks, PVLED, PSC, SPPCom, SOF), L. Caspani, A. Tauke-Pedretti, F. Leo, and B. Yang, eds., OSA Technical Digest (Optica Publishing Group, 2020), paper ITu2A.6.

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Abstract

Gallium phosphide-on-insulator (GaP-OI) has recently emerged as a promising platform for integrated nonlinear photonics due to its intrinsic material properties. Here we demonstrate the transfer of GaP layers to an oxidized silicon wafer using micro-transfer printing as a new approach for versatile future (hetero)-integrations.

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Gallium phosphide transfer printing for integrated nonlinear photonics

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