High Modulation Efficiency Segmented Mach-Zehnder Modulator Monolithically Integrated with Linear Driver in 0.25 µm BiCMOS Technology

Christian Kress; Karanveer Singh; Tobias Schwabe; Stefan Preußler; Thomas Schneider; J. Christoph Scheytt

doi:10.1364/IPRSN.2021.IW1B.1

OSA Advanced Photonics Congress 2021
OSA Technical Digest (Optica Publishing Group, 2021),
paper IW1B.1
•https://doi.org/10.1364/IPRSN.2021.IW1B.1

High Modulation Efficiency Segmented Mach-Zehnder Modulator Monolithically Integrated with Linear Driver in 0.25 µm BiCMOS Technology

Christian Kress, Karanveer Singh, Tobias Schwabe, Stefan Preußler, Thomas Schneider, and J. Christoph Scheytt

Integrated Photonics Research, Silicon and Nanophotonics 2021

Washington, DC United States
26–29 July 2021
ISBN: 978-1-943580-94-1

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Advances in Optical Modulation (IW1B)

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C. Kress, K. Singh, T. Schwabe, S. Preußler, T. Schneider, and J. C. Scheytt, "High Modulation Efficiency Segmented Mach-Zehnder Modulator Monolithically Integrated with Linear Driver in 0.25 µm BiCMOS Technology," in OSA Advanced Photonics Congress 2021, B. Yang, F. Leo, A. Tauke-Pedretti, S. Arafin, M. Clerici, L. Caspani, L. Busse, M. Kats, J. Fan, W. Ming (Steve) Lee, D. Caplan, N. Parsons, W. Freude, C. Tremblay, D. Hillerkuss, K. Igarashi, H. Elgala, N. Guerrero Gonzalez, R. "Patty" Stabile, K. Jaeger, R. Saive, H. Aziz, and H. Tan, eds., OSA Technical Digest (Optica Publishing Group, 2021), paper IW1B.1.

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Abstract

We present a monolithically integrated electronic-photonic Mach-Zehnder modulator with a linear, segmented driver on the same silicon substrate. As metric for the modulation efficiency, the external V_π is hereby reduced to only 420 mV.

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