Comparative study of PEALD-deposited and sputtered AlN’s optical properties for mid-infrared wavelengths

Leonid Yu. Beliaev; Evgeniy Shkondin; Andrei V. Lavrinenko; Osamu Takayama

doi:10.1364/IPRSN.2021.JTu1A.9

OSA Advanced Photonics Congress 2021
OSA Technical Digest (Optica Publishing Group, 2021),
paper JTu1A.9
•https://doi.org/10.1364/IPRSN.2021.JTu1A.9

Comparative study of PEALD-deposited and sputtered AlN’s optical properties for mid-infrared wavelengths

Leonid Yu. Beliaev, Evgeniy Shkondin, Andrei V. Lavrinenko, and Osamu Takayama

Integrated Photonics Research, Silicon and Nanophotonics 2021

Washington, DC United States
26–29 July 2021
ISBN: 978-1-943580-94-1

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Joint Poster Session (JTu1A)

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L. Y. Beliaev, E. Shkondin, A. V. Lavrinenko, and O. Takayama, "Comparative study of PEALD-deposited and sputtered AlN’s optical properties for mid-infrared wavelengths," in OSA Advanced Photonics Congress 2021, B. Yang, F. Leo, A. Tauke-Pedretti, S. Arafin, M. Clerici, L. Caspani, L. Busse, M. Kats, J. Fan, W. Ming (Steve) Lee, D. Caplan, N. Parsons, W. Freude, C. Tremblay, D. Hillerkuss, K. Igarashi, H. Elgala, N. Guerrero Gonzalez, R. "Patty" Stabile, K. Jaeger, R. Saive, H. Aziz, and H. Tan, eds., OSA Technical Digest (Optica Publishing Group, 2021), paper JTu1A.9.

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Abstract

We present a comparative study of the influence o f t he d eposition method (reactive sputtering and plasma enhanced atomic layer deposition) and film thickness (from 66 nm to 303 nm) on the AlN’s dielectric function.

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