Abstract
Information on the relaxation of nonequilibrium free carriers is not only important to the understanding of the physics of semiconductors but is also crucial for the design of high-speed semiconductor devices. The corresponding rates that are due to the electron–phonon, carrier-carrier, and plasmon scattering processes are generally in the subpicosecond time domain and have been difficult to measure directly. As a result, much controversy exists in the literature on the relaxation rates of hot carriers in highly excited conduction and valence-band states of semiconductors such as GaAs. GaAs is a particularly important material since it is being considered seriously for use in highspeed electronic devices.
© 1984 Optical Society of America
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