Abstract
We demonstrate that the optical response of GaInAsP can be extremely fast, ~10 psec, for excited carrier concentrations in excess of 5 X 1019 cm−3, consistent with the expected Auger recombination rate. Direct measurements of the excess carrier lifetime and induced intervalence band absorption were studied by the excite-probe technique using 5-psec, 1.054-μm pulses from a mode-locked Nd-phosphate glass laser. An understanding of these processes is particularly important because of the role they are thought to play in the strong temperature dependence of the threshold currents of long-wavelength Ga-InAsP injection lasers.1 Fast carrier dynamics is also of interest for other optoelectronic applications such as optically bistable devices and detectors.
© 1984 Optical Society of America
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