Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1984),
  • paper ThEE2

GaAlAs/GaAs Quantum-Well Lasers by Metalorganic Chemical-Vapor Deposition

Not Accessible

Your library or personal account may give you access

Abstract

Although the first semiconductor lasers were reported in 1962,1–4 it was not until 1970 that continuous, room-temperature laser operation was demonstrated.5,6 This achievement required the implementation of lattice-matched heterostructures,7 which were fabricated by improved crystal growth techniques. Since the early 1970's, much effort has been devoted to refining both the laser structure and crystal growth. Recently, one of these techniques, metalorganic chemical vapor deposition (MO-CVD), has become increasingly popular as a consequence of its versatility and economy. The chemistry of MO-CVD growth of III-V compounds was pioneered by Manasevits as early as 19688; however, it was Dupuis and Dapkus9 who demonstrated that high-laser-quality GaAs/GaAlAs heterostructures can be achieved by MO-CVD.

© 1984 Optical Society of America

PDF Article
More Like This
Properties of GaAlAs/GaAs Quantum Well Heterostructures Grown by Metalorganic Chemical Vapor Deposition

R. D. Bumham, W. Streifer, T. L. Paoli, R. L. Thornton, and D. L. Smith
WD2 Picosecond Electronics and Optoelectronics (UEO) 1985

InGaAs/GaAs strained layer quantum well heterostructure lasers and laser arrays by metalorganic chemical vapor deposition

P. K. YORK, K. J. BEERNINK, G. E. FERNANDEZ, and J. J. COLEMAN
THM3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1989

InGaAs-GaAs Strained Layer Quantum Well Buried Heterostructure Lasers (λ> 1 μm) by Metalorganic Chemical Vapor Deposition

P. K. York, K. J. Beernink, G. E. Fernández, and J. J. Coleman
TuC3 Quantum Wells for Optics and Opto-Electronics (QWOE) 1989

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved