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  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1984),
  • paper ThHH1

Two-Photon Spectroscopy of GaAs*

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Abstract

Nonlinear spectroscopy is an interesting and increasingly useful method in the study and characterization of semiconductors.1,2 As a result it has now become an active and rapidly growing field of spectroscopy. We present high-resolution two-photon absorption (TPA) spectra obtained at 1.8 K for high-purity epitaxial GaAs using photoconductivity (PC) techniques. The TPA spectra were studied from energies below to well above the free-exciton and band-gap region.

© 1984 Optical Society of America

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