Abstract
In preliminary studies previously reported, a symmetric metal-insulator-semiconductor-insulator-metal structure fabricated on a silicon substrate has exhibited a short time response, large bandwidth, low dark noise, and phototransistor gain1 we report experimental and theoretical results that elucidate interesting aspects of the structure, both for applications as a fast detector and for fundamental studies of carrier injection across tunnel barriers.
© 1984 Optical Society of America
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