Time-resolved Raman spectroscopy of GaAs

J. A. KASH; J. C. TSANG

International Quantum Electronics Conference
OSA Technical Digest (Optica Publishing Group, 1986),
paper MBB1

Time-resolved Raman spectroscopy of GaAs

J. A. KASH and J. C. TSANG

International Quantum Electronics Conference 1986

San Francisco, California United States
9–13 June 1986
ISBN: 0-936659-11-4

From the session
Ultrafast Phenomena: 1 (MBB)

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J. A. KASH and J. C. TSANG, "Time-resolved Raman spectroscopy of GaAs," in International Quantum Electronics Conference, M. Richardson, C. Tang, D. Grischkowsky, and T. Hansch, eds., OSA Technical Digest (Optica Publishing Group, 1986), paper MBB1.

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Abstract

We have used time-resolved Raman spectroscopy to study the initial energy relaxation of non-equilibrium carriers in GaAs, The basic information to be obtained is the means by and the rate at which hot carriers can lose energy to the lattice. The dominant energy loss mechanism is the coupling of the charged carriers to the longitudinal optic (LO) phonons of the crystal.¹

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