Abstract

GalnAsP is a quaternary alloy semiconductor with band gap adjustable by composition in the 1-2-μm range. It is thus an important material for optoelectronic applications and is used in devices operating at wavelengths for which optical fibers exhibit low loss and minimum dispersion. Properties such as carrier lifetime and optical nonlinearities vary with band gap across the alloy range and are of interest for devices such as lasers, detectors, and optically bistable devices.

© 1986 Optical Society of America