Abstract
Field-induced change in luminescence characteristics in quantum-well structures has been attracting considerable interest from both physics and engineering points of view. We demonstrated a field-induced increase in the recombination lifetime of carriers inside quantum wells as a consequence of observing the transient response of photoluminescence (PL) intensity for a pulsed electric field.1 Fast switching, free from lifetime limitation, of luminescence intensity in a GaAs/AIAs quantum-well structure for a short-pulsed electric field will be demonstrated.
© 1986 Optical Society of America
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