Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1986),
  • paper MGG2

Fast switching of luminescence intensity by a pulsed electric field in a GaAs/AIAs multiquantum-well structure

Not Accessible

Your library or personal account may give you access

Abstract

Field-induced change in luminescence characteristics in quantum-well structures has been attracting considerable interest from both physics and engineering points of view. We demonstrated a field-induced increase in the recombination lifetime of carriers inside quantum wells as a consequence of observing the transient response of photoluminescence (PL) intensity for a pulsed electric field.1 Fast switching, free from lifetime limitation, of luminescence intensity in a GaAs/AIAs quantum-well structure for a short-pulsed electric field will be demonstrated.

© 1986 Optical Society of America

PDF Article
More Like This
Temperature and excitation intensity dependent luminescence lifetime studies on GaAs/AlGaAs quantum well structure

Dongho Kim, Hong Sik Jeong, and Seung Han Park
MSS5 OSA Annual Meeting (FIO) 1992

Picosecond pulse generation through active Q-switching in a GaAs/AIGaAs multiquantum-well laser with art intracavity monolithic loss modulator

Y. ARAKAWA, A. LARSSON, J. PASLASKI, and AMNON YARIV
MCC4 International Quantum Electronics Conference (IQEC) 1986

Electric Field-induced Decrease of Exciton Lifetime in GaAs Quantum Wells

J.A. Kash, E.E. Mendez, and H. Morkoc
FA3 Picosecond Electronics and Optoelectronics (UEO) 1985

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved