Abstract
Large laser-induced changes in the refractive index of semiconductors were essential for optical switching and optical bistability. Band gap resonant changes were observed in InSb with both nanosecond and picosecond pulses.1,2 Here we report observation of strong modulation of the refractive index in InSb due to free carriers generated by two-photon absorption.
© 1986 Optical Society of America
PDF ArticleMore Like This
J. E. Ehrlich, L. Li, P. Bundman, Colin T. Seaton, George I. Stegeman, and S. Desmond Smith
MCC6 OSA Annual Meeting (FIO) 1986
Steponas Ašmontas, Jonas Gradauskas, and Edmundas Širmulis
QWD63 European Quantum Electronics Conference (EQEC) 1994
D. CRAIG, A. MILLER, and M. J. SOILEAU
FEE5 International Quantum Electronics Conference (IQEC) 1986