Stimulated Raman gain spectroscopy of gallium arsenide

S. M. BECK; J. E. WESSEL

International Quantum Electronics Conference
OSA Technical Digest (Optica Publishing Group, 1986),
paper THGG16

Stimulated Raman gain spectroscopy of gallium arsenide

S. M. BECK and J. E. WESSEL

International Quantum Electronics Conference 1986

San Francisco, California United States
9–13 June 1986
ISBN: 0-936659-11-4

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Poster Session: 3 (THGG)

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S. M. BECK and J. E. WESSEL, "Stimulated Raman gain spectroscopy of gallium arsenide," in International Quantum Electronics Conference, M. Richardson, C. Tang, D. Grischkowsky, and T. Hansch, eds., OSA Technical Digest (Optica Publishing Group, 1986), paper THGG16.

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Abstract

Even though Raman scattering of semiconductor materials has been studied intensively for over two decades, new experiments continue to reveal information of fundamental importance concerning mechanisms.

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