Dynamics of hot carrier relaxation, carrier recombination, and band gap renormalization in the ternary semiconductor AlxGa1−xAs

K. BOHNERT; H. KALT; THOMAS F. BOGGESS; ARTHUR L. SMIRL; R. Y. LOO

International Quantum Electronics Conference
OSA Technical Digest (Optica Publishing Group, 1986),
paper TUAA3

Dynamics of hot carrier relaxation, carrier recombination, and band gap renormalization in the ternary semiconductor Al_xGa_1−xAs

K. BOHNERT, H. KALT, THOMAS F. BOGGESS, ARTHUR L. SMIRL, and R. Y. LOO

International Quantum Electronics Conference 1986

San Francisco, California United States
9–13 June 1986
ISBN: 0-936659-11-4

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Ultrafast Phenomena: 2 (TUAA)

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K. BOHNERT, H. KALT, T. F. BOGGESS, A. L. SMIRL, and R. Y. LOO, "Dynamics of hot carrier relaxation, carrier recombination, and band gap renormalization in the ternary semiconductor AlxGa1−xAs," in International Quantum Electronics Conference, M. Richardson, C. Tang, D. Grischkowsky, and T. Hansch, eds., OSA Technical Digest (Optica Publishing Group, 1986), paper TUAA3.

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Abstract

The dynamics of hot carrier relaxation and carrier recombination in the ternary semiconductor Al_xGa_1−xAs are investigated by time-resolved measurements of the photoluminescence and transmission following intense picosecond excitation. We also examine the modifications of the band structure introduced by high carrier densities, i.e., band gap renormalization due to exchange and correlation effects in the interacting carrier system. Experimental parameters are the alloy composition, the lattice temperature, and the initial density and excess energy of the excited carriers.

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