Abstract

Understanding the modulation dynamics and phase noise properties of semiconductor lasers is essential in certain applications of these devices. In this regard, two important quantities are the relaxation oscillation frequency and the field spectrum linewidth. We discuss improvement of these properties through microscopic modification of the laser active layer material using quantum-wire, quantum-box, as well as quantum-well structures.¹ We also present experimental results which use high magnetic fields to demonstrate these effects.^2-4 Quantum-wire effects are simulated by immersing a conventional double heterostructure laser in a high magnetic field and deriving two directions of carrier confinement from the Lorenz force. A third direction of confinement is achieved for quantum-box simulations by employing a quantum-well semiconductor laser.

© 1987 Optical Society of America