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Conferences > IQEC > 1987 > MGG > MGG2
  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1987),
  • paper MGG2

Phase-space absorption quenching in a single modulation-doped InGaAs/lnAIAs quantum well

I. BAR-JOSEPH, C. KLINGSHIRN, DANIEL S. CHEMLA, DAVID A. B. MILLER, J. M. KUO, and T. Y. CHANG

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Abstract

The optical properties of quantum-well (GW) structures can be strongly modified by introducing free carriers into the wells. Three major affects contribute to this: phase space filling; band gap renormalization; and Coulomb screening. It was recently found that in two dimensions the first two effects are dominant.1 The carriers can be introduced into the QW by photoexcitation2 or electrostatically in modulation-doped structures.3

© 1987 Optical Society of America

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