Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1987),
  • paper MGG5

Stark effect in AlxGa1-xAs/GaAs coupled quantum wells

Not Accessible

Your library or personal account may give you access

Abstract

Semiconductor quantum wells (QWs) have been shown to be important for application to electrooptic (EO) modulators.1 Single QWs, however, are structurally too simple for engineering electroabsorption properties, such as large modulation depth with small applied fields.

© 1987 Optical Society of America

PDF Article
More Like This
INTERSUBBAND RELAXATION IN GaAs/AlxGa1−xAs QUANTUM WELL STRUCTURES

A. Seilmeier, M. Wörner, H.-J. Hübner, G. Abstreiter, G. Weimann, and W. Schlapp
ThB8 International Quantum Electronics Conference (IQEC) 1988

Calculation of photogenerated carrier escape rates from single GaAs / AlxGa1-xAs quantum wells.

D.J. Moss and T. Ido
MD.21 International Conference on Ultrafast Phenomena (UP) 1994

Intersubband Relaxation of Electrons in AlxGa1−xAs/GaAs Quantum Wells During Photoexcitation

Stephen M. Goodnick and Paolo Lugli
TT158 Picosecond Electronics and Optoelectronics (UEO) 1989

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved