Excitionic electroabsorption in quantum wells and bulk semiconductors

DAVID A. B. MILLER

International Quantum Electronics Conference
OSA Technical Digest (Optica Publishing Group, 1987),
paper THEE1

Excitionic electroabsorption in quantum wells and bulk semiconductors

DAVID A. B. MILLER

International Quantum Electronics Conference 1987

Baltimore, Maryland United States
26 April–1 May 1987
ISBN: 0-936659-51-3

From the session
Symposium on Exciton Physics: 2 (THEE)

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D. A. B. MILLER, "Excitionic electroabsorption in quantum wells and bulk semiconductors," in International Quantum Electronics Conference, T. Hansch, D. Grischkowsky, D. Pritchard, and C. Shank, eds., Vol. 21 of OSA Technical Digest (Optica Publishing Group, 1987), paper THEE1.

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Abstract

Electric fields in semiconductors can produce large changes in optical absorption, especially in the presence of excitonic absorption resonances. Strong room temperature exciton lines and novel electroabsorption processes in quantum-well structures have stimulated increased interest in this field.

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