Abstract

The excitonic transition in a semiconductor is characterized by three fundamental parameters: (1) the excitonic eigenenergy given by the band structure and the Coulomb Interaction of the electron-hole pair; (2) the oscillator strength measuring the strength of the photon-exciton interaction; and (3) the phase coherence time which is a direct measure of the optical dephasing caused by the residual interaction of the exciton with the crystal.

© 1987 Optical Society of America