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  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1987),
  • paper TUEE2

Realization of an Esaki-Tsu-type doping superlattice

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Abstract

A new Esaki-Tsu-type doping superlattice has been made for the first time, we believe, by using a train of alternating n- and p-type delta-doped impurity sheets during crystal growth by molecular beam epitaxy. The δ-doping technique1 allows us to use high 2-D charge densities of 1 × 1013 cm−2 localized within one monolayer of the host GaAs lattice. Due to the alternating charge distribution sawtooth shaped conduction and valence band edges result (sawtooth superlattice). At period lengths of zp≤ 150 Å, which, we believe, have not been used before, the sawtooth superlattice is a superlattice according to the original proposal of Esaki and Tsu.2

© 1987 Optical Society of America

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