Cooling of photoexcited carriers in a Ga0.47In0.53As multiple quantum well

H. LOBENTANZER; H.-J. POLLAND; W. W. RUHLE; W. STOLZ; K. PLOOG

International Quantum Electronics Conference
OSA Technical Digest (Optica Publishing Group, 1987),
paper TUGG40

Cooling of photoexcited carriers in a Ga_0.47In_0.53As multiple quantum well

H. LOBENTANZER, H.-J. POLLAND, W. W. RUHLE, W. STOLZ, and K. PLOOG

International Quantum Electronics Conference 1987

Baltimore, Maryland United States
26 April–1 May 1987
ISBN: 0-936659-51-3

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Poster Session: 1 (TUGG)

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H. LOBENTANZER, H. -. POLLAND, W. W. RUHLE, W. STOLZ, and K. PLOOG, "Cooling of photoexcited carriers in a Ga0.47In0.53As multiple quantum well," in International Quantum Electronics Conference, T. Hansch, D. Grischkowsky, D. Pritchard, and C. Shank, eds., Vol. 21 of OSA Technical Digest (Optica Publishing Group, 1987), paper TUGG40.

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Abstract

Cooling of hot carriers in ternary quantum well (QW) systems has not yet been studied systematically so far as a function of the excitation density.^1,2 However, a complete set of experimental data at different carrier densities is needed to understand the carrier–phonon coupling. We systematically studied the relaxation of hot carriers in an undoped Ga_0.47in_0.53As/Ai_0.48In_0.52As multiple quantum well (MQW). We find a strong retardation of the cooling when the density of hot carriers is increased from 10¹⁶ to 10¹⁸ cm⁻³.

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