Abstract

High-speed compound semiconductor devices have dimensions challenging the distance between collisions. The transport in these devices is dominated by nonstationary electron dynamics usually referred to according to the regime as ballistic, nearly ballistic transport, or velocity overshoot. This transient transport is governing and will govern the speed of present and future high-speed electronic devices. The pseudomorphic modulation doped field effect transistor (MODFET) and the permeable base transistor with a switching time of 3 ps are examples of such devices where the transport cannot be considered classical.

© 1987 Optical Society of America