TWO PHOTON SPECTROSCOPY OF ELECTRONIC TSANSITIONS IN PURE GdAlO3

L. A. O. Nunes; J. C. Castro Neto

International Conference on Quantum Electronics
OSA Technical Digest (Optica Publishing Group, 1988),
paper MC7

TWO PHOTON SPECTROSCOPY OF ELECTRONIC TSANSITIONS IN PURE GdAlO₃

L. A. O. Nunes and J. C. Castro Neto

International Quantum Electronics Conference 1988

Tokyo Japan
18–21 July 1988
ISBN:

From the session
Laser spectroscopy (MC)

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L. A. O. Nunes and J. C. Castro Neto, "TWO PHOTON SPECTROSCOPY OF ELECTRONIC TSANSITIONS IN PURE GdAlO3," in International Conference on Quantum Electronics, H. Inaba, T. Yajima, and T. Ikegami, eds., OSA Technical Digest (Optica Publishing Group, 1988), paper MC7.

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Abstract

The Gd³⁺ ion has a very special level structure when compared to all others rare-earths ions. Its first excited state is 32.000 cm^-1above the ground state⁽¹⁾ This unique property make dificult to study the level structure of this ion in solids due to its superposition with the excitonic absorption band of the crystal. Two photon absorption spectroscopy is the ideal technique to study this ion since the cross section for two photon excitonic transition is forbiden⁽²⁾

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