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Conferences > IQEC > 1988 > IPD > PD22
  • International Conference on Quantum Electronics
  • OSA Technical Digest (Optica Publishing Group, 1988),
  • paper PD22

REFLECTIVITY DEPENDENCE OF THRESHOLD CURRENT IN GaInAsP/InP SURFACE EMITTING LASER

M. Oshikiri, H. Kawasaki, F. Koyama, and K. Iga

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Abstract

Previously we reported GaInAsP/InP surface emitting (SE) laser with a Au/SiO2 film for the light output side. The threshold current (Ith) was about 12~ 20 ma1), whereas the theoretical expectation is 2~3 mA. We have come to suspect that the reflectivity of the employed mirror is still low. In this study we systematically changed the reflectivity of a Si/Si02 multilayer reflector and have obtained Ith=6.0mA at 77K continuous wave (CW) operation. The effective Ith is 4.5 mA when we subtract the approximately 1.5 mA contributing to leakage current.

© 1988 Optical Society of America

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