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Optica Publishing Group
  • International Conference on Quantum Electronics
  • OSA Technical Digest (Optica Publishing Group, 1988),
  • paper ThB8

INTERSUBBAND RELAXATION IN GaAs/AlxGa1−xAs QUANTUM WELL STRUCTURES

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Abstract

Carrier relaxation is more complex in 2D-heterostructures than in 3D-semiconductor material. The carrier confinement generates two dimensional subbands. In consequence, two different relaxation mechanisms appear: intrasubband and intersubband transitions. There exists a lot of information on carrier cooling in bulk semiconductors and on intrasubband relaxation in GaAs/AlxGa1−xAs quantum well structures. Time constants in the order of several 10−12s to 10−13s have been measured via transient absorption changes or time resolved photoluminescence. In contrast, our knowledge of intersubband relaxation is very poor.

© 1988 Optical Society of America

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