Abstract
Dynamics of hot carriers in semiconductors have attracted much attention recently1. The most fundamental relaxation process for electrons (e) and holes (h) occurs through their mutual scattering. Direct experimental information on carrier-carrier scattering (CCS) in semiconductors is very scarce because of the difficulties of direct measurements with enough time resolution (10-100 fs) and because the usual admixture of CCS with other relaxation processes (phonon absorption and emission, intervalley scattering, plasmon emission). In our experiments CCS is effectively isolated from other relaxation mechanisms and studied at kHz rate up to very large carrier concentration. In this talk we report the first investigation of the influence of a thermalized Fermi-sea in modulation doped (MD) GaAs/AlGaAs Quantum Weil Structures (QWS) on femtosecond CCS. We compare these results to the case of undoped (UD) QWS.
© 1988 Optical Society of America
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